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June 1, 1963Journal of Applied Physics

Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions

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Authors

AGA. GoetzbergerFraunhofer Institute for Solar Energy SystemsBMBenjamin R. McDonaldNorthwestern UniversityRHRoland H. HaitzQuark Pharmaceuticals (United States)

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Goetzberger et al. (1963) studied this question.

synapsesocial.com/papers/6a6f2d3e2163a0a01bc382cahttps://doi.org/10.1063/1.1702640
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Metal Precipitates in Silicon p-n Junctions1960 · 271 citations
  2. 2Surface Protection and Selective Masking during Diffusion in Silicon1957 · 169 citations
  3. 3Intrinsic Optical Absorption in Germanium-Silicon Alloys1958 · 680 citations
  4. 4Uniform Avalanche Effect in Silicon Three-Layer Diodes1960 · 14 citations
  5. 5Avalanche Breakdown in Silicon1954 · 481 citations