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January 1, 1963Proceedings of the IEEE

The silicon insulated-gate field-effect transistor

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Authors

SHS.R. HofsteinPrinceton UniversityFHF.P. HeimanBrunswick (United States)

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Hofstein et al. (1963) studied this question.

synapsesocial.com/papers/6a6f2dbb8031ec7bb1dba1fahttps://doi.org/10.1109/proc.1963.2488
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