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October 1, 1971Journal of Applied Physics

Doping Dependence of Hole Lifetime in n-Type GaAs

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Authors

CHC. J. HwangHewlett-Packard (United States)

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C. J. Hwang (1971) studied this question.

synapsesocial.com/papers/6a6f2e022163a0a01bc383eahttps://doi.org/10.1063/1.1659787
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optical Properties of n-Type GaAs. III. Relative Band-Edge Recombination Efficiency of Si- and Te-Doped Crystals before and after Heat Treatment1969 · 40 citations
  2. 2Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements1969 · 160 citations
  3. 3Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs1969 · 68 citations
  4. 4Photon-Radiative Recombination of Electrons and Holes in Germanium1954 · 1,086 citations
  5. 5Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV1962 · 1,083 citations