The electrical resistivity and Hall coefficient in single crystals of bismuth have been measured as a function of uniaxial stress along the trigonal axis at 4.2, 77, and 295^∘{}K. Values of elastoresistance and elasto-Hall coefficients have been calculated by combining the results of the present experiment with our earlier measurements of the pressure dependence of the galvanomagnetic effects. The data are analyzed in terms of a model consisting of a conduction band overlapping a valence band. The deformation potential components defining the strain dependence of the overlap energy (E₀=0.03 eV) are evaluated to be E₁=-2.7 eV and E₂=+2.8 eV.
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Jain et al. (1964) studied this question.
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