The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasers

It is shown that bulk nonradiative recombination near the heterojunctions in the wide-band-gap regions is probably an important contributor to the higher threshold current densities of the best state-of-the-art molecular beam epitaxial GaAs-AlxGa1−xAs DH lasers over similar geometry liquid-phase epitaxial lasers. This recombination probably is at least part of the cause of the large recombination velocity (measured as interfacial recombination velocity) in molecular beam epitaxial heterostructures.