AlxGa1−xAs1−y′P y′–GaAs1−yPy HETEROSTRUCTURE LASER AND LAMP JUNCTIONS

A method is described to grow successfully from solution AlxGa1−xAs1−y′P y′ (p-type) on GaAs1−yPy (n-type), to preserve the lattice match (y′ ≈ y), and to obtain the improved heterostructure junction devices previously realized only in the AlGaAs/GaAs system. Although not optimized, these structures have been operated as pulsed room-temperature lasers, and because of an inherent wide-gap window can be used conveniently for optical purposes and for excess carrier lifetime measurements. Carrier lifetime measurements, for example, indicate freedom from defects at the AlGaAsP/GaAsP barrier.