This paper treats a transmission-line model of the insulated-gate field-effect transistor (also known as the metal-oxide-semiconductor or MOS transistor) in the pre-pinchoff mode in order to determine the small-signal response of the device. The results are presented in terms of the canonical set of four complex admittance parameters which are dependent on frequency, the bias conditions, and known constants of the device. It develops that the transmission line involved is a non-uniform one composed of non-linear elements leading to differential equations of some complexity. These are solved by each of two methods (one an infinite-series technique, the other an analogue simulation) and the results compared. Finally, the behaviour of the device connected as a simple amplifier in the common-source configuration is investigated.
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CANDLER et al. (1965) studied this question.
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