Electronic states associated with the 60° edge dislocation in silicon

The effect of the 60° edge dislocation upon the local density of states of silicon is examined through the continued fraction approach. Details of the wave functions associated with the dislocation states are reported. A new interpretation is given for the polarization dependence of the 0·1 eV optical transition in plastically deformed n-type germanium, and the importance of electron correlation effects in the narrow dislocation band emphasized.