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October 1, 1964Journal of Applied Physics

Growth of Lattice Defects in Silicon during Oxidation

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Authors

HQH. J. QueisserGoethe University FrankfurtPLP. G. G. van LoonEuropean Union

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Queisser et al. (1964) studied this question.

synapsesocial.com/papers/6a6f2ef778a11c550e08dd92https://doi.org/10.1063/1.1713179
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Copper Precipitation on Dislocations in Silicon1956 · 462 citations
  2. 2The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam1963 · 122 citations
  3. 3Surface Damage and Copper Precipitation in Silicon1963 · 98 citations