What question did this study set out to answer?

Investigate the relationship between process-induced in-plane distortion and wafer curvature changes caused by high-temperature film growth and deposition on silicon wafers.

October 15, 1978Applied Physics Letters

Correlation between process-induced in-plane distortion and wafer bowing in silicon

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Authors

LYL.D. YauIntel (United States)

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Implication

Experimental study demonstrates direct correlation between in-plane distortion and wafer curvature in silicon wafers, highlighting stress effects of thin-film processing.

Key Points

Investigate the relationship between process-induced in-plane distortion and wafer curvature changes caused by high-temperature film growth and deposition on silicon wafers.
Processed 3-inch silicon wafers through high-temperature thin-film growth and deposition steps.
Measured in-plane distortion directly using the Bell Laboratories electron-beam exposure system (EBES) alongside wafer curvature evaluations.
Demonstrated that the magnitude of in-plane distortion correlates directly with changes in wafer curvature induced by grown or deposited films.
Found that in-plane distortion across modern silicon processing steps can remain linear within ±1/8 μm.

Cite This Study

L.D. Yau (1978) studied this question.

synapsesocial.com/papers/6a6f3cfa26a7f98052dbf5c7 https://doi.org/10.1063/1.90493

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Implication

Experimental study demonstrates direct correlation between in-plane distortion and wafer curvature in silicon wafers, highlighting stress effects of thin-film processing.

Correlation between process-induced in-plane distortion and wafer bowing in silicon

Discussion

Member takes

Implication

Key Points

Cite This Study

Correlation between process-induced in-plane distortion and wafer bowing in silicon

Discussion

Member takes

Implication

Key Points

Cite This Study

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