The drift mobility of holes in n-type germanium and electrons in p-type germanium has been measured as functions of impurity concentration and temperature. In single crystals of resistivity greater than 10 ohm-centimeter, the mobility at 300^∘{}K of holes is μP=1900±50 cm²/volt-sec and of electrons is μN=3900±100 cm²/volt-sec. For this high resistivity material, the temperature dependence of mobility in the same units is μP=3.5×10⁷T^-1.6 and μN=9.1×10⁸T^-2.3, in agreement with conductivity-mobility measurements.
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M. B. Prince (1953) studied this question.
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