Answers are grounded in this paper and cite their sources.
The reactive ion etching characteristics of ZnO have been investigated as functions of CH 4 /H 2 gas composition, total gas pressure, and radio frequency (rf) plasma power. It was found that the etching rate of ZnO strongly depends on gas composition and gas pressure, suggesting that the etching of ZnO largely involves a process in which a volatile metalorganic zinc compound is formed. The etching rate of ZnO increased linearly with rf plasma power owing to its high bond-breaking efficiency, dc bias, and the degree of sputter desorption of etch products.
No takes yet. Share an insight, caveat, or question.
Guo et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: