Metalorganic Chemical Vapor Deposition of ZnO Using D₂O as Oxidant

ZnO films with low resistivity and high transparency in a wavelength range of 400 nm–1300 nm were successfully grown by the metalorganic chemical vapor deposition (MOCVD) technique using D 2 O as a new oxidant for diethylzinc on glass substrates. It was also found that the crystal orientation of the films was strongly dependent on the substrate temperature. By employing both D 2 O and H 2 O as oxidants for diethylzinc, the surface morphology of low-resistivity ZnO films could be modified. The obtained films are suitable as transparent conducting materials.