Transparent and Conductive ZnO Thin Films Prepared by Atmospheric-Pressure Chemical Vapor Deposition Using Zinc Acetylacetonate

Highly transparent and conductive undoped and impurity-doped ZnO thin films have been prepared by atmospheric-pressure chemical vapor deposition (CVD) using Zn(C 5 H 7 O 2 ) 2 as a zinc source. A resistivity as low as 4.6×10 -3 Ω · cm and an average transmittance above 85% in the visible range were obtained for undoped ZnO thin films deposited at 550°C using H 2 O as the oxygen source. Al-doped ZnO films with a resistivity as low as 7×10 -3 Ω · cm and an average transmittance above 85% in the visible range were prepared at 350°C by the atmospheric-pressure CVD using Al(C 5 H 7 O 2 ) 3 as the dopant source. In addition, ZnO films with textured surface (milky films) were easily prepared with thicknesses greater than about 400 nm by the atmospheric pressure CVD.