Analog Characterization of III-V on SOI Electro-Absorption Modulators

This paper describes the analog performance of two heterogeneous integrated III-V Electro-Absorption Modulators (EAMs) on SOI, with lengths of 150 μm and 200 μm. Extinction ratios of 8.7 dB and 15 dB were measured from the EAMs under 3 V reverse bias voltage, with a maximum slope efficiency of 1.97 V−1in the longer EAM at 0 V. The second and third order spurious-free dynamic range of these EAMs were measured to compare how their dynamic ranges are impacted due to change in bias voltage and laser wavelength detuning.