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August 1, 1969Journal of Applied Physics

Electrical Behavior of Group III and V Implanted Dopants in Silicon

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Authors

RBR. BaronWarsaw University of TechnologyGSG. A. ShifrinHRL Laboratories (United States)OMO. J. MarshCalifornia Institute of Technology

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Cite This Study

Baron et al. (1969) studied this question.

synapsesocial.com/papers/6a6f4da96ceb2bbd16dfa4cfhttps://doi.org/10.1063/1.1658260
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