A photovoltaic method has been used to measure the relative absorption in hexagonal Se of photons of energy 1.6 ev to 2.0 ev in the temperature range 80^∘{}K to 440^∘{}K. The measurements show that the transitions are indirect at the band edge, requiring the absorption or emission of a phonon. The energy gap is found to be (1.79±{}0.01) ev at 300^∘{}K; above this temperature dEGdT=-9×10^-4 ev/degree. The absorption edge of hexagonal Se is compared with that of amorphous Se.
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Choyke et al. (1957) studied this question.
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