Room-temperature full GaAs-based near-infrared (NIR) upconversion has been demonstrated by connecting lattice-matched GaNAsSb/GaAs p-i-n photodetectors in series with commercial GaAs/AlGaAs light-emitting diodes (LEDs). Due to the avalanche gain in GaNAsSb/GaAs photodetectors and high internal efficiency in GaAs/AlGaAs LEDs, the upconversion efficiency of the integrated system reaches 0.048 W/W under −7 V bias, much higher than any existing NIR upconverters without amplifying structures. We have further investigated the dependence of the upconversion efficiency on applied bias and incident light intensity. The present work establishes an experimental base for direct epitaxial growth of full GaAs-based NIR upconverters with high upconversion efficiencies.
No takes yet. Share an insight, caveat, or question.
Yang et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: