Pt/Pb(Zr0.2Ti0.8)O3(PZT)/Ti-Al-O(TAO)/Si heterostructure has been fabricated as the metal/ferroelectric/insulator/semiconductor structure. It is found that PZT film is polycrystalline, and TAO film is amorphous. Moreover, the memory windows are 3.4 V, 5.9 V, 8.6 V, and 11.2 V corresponding, respectively, to the voltages of 10 V, 12 V, 14 V, and 16 V, indicating that the memory window increases linearly with the increase of applied voltage, which can be attributed to the increase of the polarization and coercive voltage of the Pb(Zr0.2Ti0.8)O3 film. The leakage current density of the device, measured at 15 V, is 3.54 × 10−6 A/cm2, is favorable for the device application.
No takes yet. Share an insight, caveat, or question.
Fu et al. (2014) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: