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The scanning tunneling microscope is used to study arsenic-related point defects in low-temperature-grown GaAs. Tunneling spectroscopy reveals a band of donor states located near Eᵥ+0.5 eV arising from the defects. Images of this state reveal a central defect core, with two satellites located about 15 {} from the core. The structure of the defect is found to be consistent with that of an isolated arsenic antisite defect (As on a Ga site) in a tetrahedral environment.
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Feenstra et al. (1993) studied this question.
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