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The low temperature longitudinal resistance-per-square Rₓₓ(T) in ungated GaAs/AlₓGa_1-xAs quantum wells of high peak hole mobility 1.7×10⁶cm²V^-1s^-1 is metallic for 2D hole density p as low as 3.8×10⁹cm^-2. The electronic contribution to the resistance, Rₑₗ(T), is a nonmonotonic function of T, exhibiting thermal activation, Rₑₗ(T)∝exp(-Eₐ/kT), for kTEF and a heretofore unnoted decay Rₑₗ(T)∝1/T for kT>EF. The form of Rₑₗ(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.
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Mills et al. (1999) studied this question.
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