Anisotropic dry etching of GaInP/AlGaInP heterostructures has been achieved for the first time in a high-ion-density electron cyclotron resonance (ECR)-generated plasma. Structures consisting of AlInP/(GaInP/AlGaInP)/AlInP and AlGaAs/(GaInP/AlGaInP)/AlGaAs heterostructures have been etched in a CH4/H2/Cl2/BCl3/Ar plasma with smooth sidewalls and surface morphologies.
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Shul et al. (1994) studied this question.
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