635 nm GaInP/GaAlInP surface-emitting laser diodes

Monolithic, in-plane visible surface-emitting laser diodes operating at 635 nm have been demonstrated. Both the deflecting 45° and 90° micromirrors were fabricated by ion beam etching. An interesting self-optical-annealing phenomenon was observed from these facet-etched GaInP/GaAlInP devices. By employing this unique characteristic, pulsed output powers of 170 mW, and 70 mW at room temperature were achieved from etched-cleaved and etched-etched uncoated devices, respectively. Output powers will increase to 725 mW with facet coatings.