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Monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and external parabolic deflecting mirrors have been operated with both short and quasi-cw current pulses. The arrays emit at 804 nm with threshold current densities as low as 220 A/cm2 and differential quantum efficiencies as high as 66%. The vertical facets and parabolic deflecting mirrors were formed by using chlorine ion-beam-assisted etching with standard photolithography.
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Donnelly et al. (1992) studied this question.
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