Low threshold current density (760 A/cm 2 ) and high power (45 mW) operation of strained Ga 0.42 In 0.58 P multiquantum well laser diodes emitting at 632 nm

A record low threshold current density of 760 A/cm2 has been obtained for a compressively strained multiquantum well laser emitting at 632 nm. Narrow stripe gain guided lasers show a maximum continuous output power of 45 mW with normally passivated mirrors. Stable laser operation over more than 3000 h at 40°C and 2 mW output power is reported for the first time.