This paper describes fabrication and characteristics of GaAlAs/GaAs wavelength tunable distributed-feedback (DFB) semiconductor lasers with linearly chirped grating. In a two-section device, a single-mode quasi-continuous tuning range of 2.2 nm at around 868 nm has been achieved. This resulted mainly from the chirped grating structure effect rather than the free carrier plasma effect or the thermal tuning. A comparison of the two-section DFB laser with a conventional uniform grating has also been carried out.
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Chen et al. (1994) studied this question.
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