Schottky barrier height of single-crystal nickel disilicide/silicon interfaces

Nickel disilicide (NiSi2) was formed on Si(100) and Si(111) substrates by the codeposition of Ni and Si. The Schottky barrier height was about 0.65 eV for NiSi2 on Si(100), independent of NiSi2 film thickness. By contrast, the Schottky barrier height for type-B NiSi2 on Si(111) depended on NiSi2 film thickness. Schottky barrier height decreased with increasing NiSi2 film thickness. It became constant (0.65 eV) above 50-nm-thick NiSi2. The Schottky barrier height determined by extrapolating NiSi2 film thickness to 1–2 layers of the NiSi2 film was 0.78–0.79 eV.