Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of NiSi₂ layers grown under ultrahigh-vacuum conditions on n-type Si(111) are found to be 0.65 and 0.79 eV for type-A and type-B epitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers.
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R. T. Tung (1984) studied this question.
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