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October 1, 1988IEEE Electron Device Letters

A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer

Takao Waho F. Yanagawa

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Abstract

The CaF/sub 2/ layer and an undoped GaAs channel layer grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs

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Cite This Study

Waho et al. (1988) studied this question.

synapsesocial.com/papers/6a6f7361febe604dd7085e52 https://doi.org/10.1109/55.17840

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Synapse has enriched 5 related papers. Consider them for comparative context:

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5All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point MemoryIEEE Electron Device Letters · Thu,

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