Resonant tunneling of electrons in GaAs-AlGaAs quantum wells is resolved by picosecond pump-and-probe electroabsorption measurements. The temperature-independent tunneling escape times are dramatically affected by the applied electric field, with a pronounced minimum at the field corresponding to the resonance between the n=1 electron level in one quantum well, and the n=2 electron level in the adjacent one. The calculated field dependence of the tunneling times is in qualitative agreement with the data.
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Livescu et al. (1989) studied this question.