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Double-heterostructure lasers with crescent-shaped InGaAsP active layers have been fabricated with CW emission of 1.54 μm. Lowest CW thresholds are 45–47 mA for a 200 μm long cavity at 25°C. The lasing near-field widths are 2.5–3.0 μm and the spectral widths to 10% of peak are 4–5 nm under both CW conditions and modulation up to 320 Mbit/s.
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Devlin et al. (1981) studied this question.
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