Optically pumped laser oscillation at 77 K has been observed in vapor-grown epitaxial Ga1−xInxAs (0⩽x⩽0.1) mesa structures which have vertical as-grown crystalline facets furnishing the optical feedback. Several hundred mesas were grown on a single slice using photolithography and selective vapor-phase epitaxy. The best mesas are flat to within a few hundred angstroms and the edges are very sharp and well defined. Details concerning the growth, morphology, and emission characteristics of the mesa lasers are given.
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Blum et al. (1975) studied this question.
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