Noise modeling and measurement techniques (HEMTs)

The high electron mobility transistor's (HEMT's) noise behavior is presented from theoretical and experimental points of view. The general method used in the high-frequency noise analysis is described and the different approximations commonly used in the derivation of the noise parameter expressions are discussed. A comparison between the noise performance of both MESFETs and HEMTs is carried out. The measurement techniques providing the noise figure and the other noise parameters are then described and compared.>