A novel Ti:LiNbO₃ridge waveguide linear mode confinement modulator fabricated by reactive ion-beam etching

In this paper we report the realization of a ridge waveguide linear mode confinement modulator using reactive ion-beam etching (RIBE). With the help of a design analysis, the modulation characteristics are predicted. Along with the measured modulation characteristics, preliminary results of the calibration of ion-beam etching inZ-cut LiNbO3by Ar and a mixture of Ar and CHF3are presented. Differential etching rates between photoresist and LiNbO3of as high as 7 are obtained. Using the proposed design of a ridge waveguide linear modulator, a linear modulation of over 67 percent is measured.