We report a study of the Se+-ion implantation and subsequent annealing of a GaAs/(Al,Ga)As multiple quantum well, characterizing the process using transmission electron microscopy, photoluminescence spectroscopy, and Monte Carlo simulation techniques. We conclude that enhanced layer interdiffusion occurs at depths several times the projected range for the Se+ implant, and that there is evidence of residual stress at similar depths.
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Bithell et al. (1990) studied this question.
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