Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 1, 1981Applied Physics Letters

Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1−xAs/GaAs superlattices

View Full Paper
Ask AI
Bookmark
Share

Authors

PDP.D. DapkusUniversity of Southern CaliforniaJCJ. J. ColemanRutgers, The State University of New JerseyWLW. D. LaidigNorth Carolina State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Dapkus et al. (1981) studied this question.

synapsesocial.com/papers/6a6f752bc92390ac2d079d1ahttps://doi.org/10.1063/1.92295
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Optical waveguides in GaAs–AlGaAs epitaxial layers1973 · 168 citations
  2. 2Electron mobilities in modulation-doped semiconductor heterojunction superlattices1978 · 1,521 citations
  3. 3The Use of Metal-Organics in the Preparation of Semiconductor Materials1971 · 124 citations
  4. 4Continuous 300 °K laser operation of single-quantum-well AlxGa1−xAs-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition1979 · 62 citations
  5. 5Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers1978 · 68 citations