Spectroscopic investigations of Si-doped Al x Ga 1-x As reveal that the deep donor ('DX centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys factor turns out to be 0.5 and the dominant coupling is with the LO 1 phonons. These data lead to the formulation of a new model for this class of centres, which unifies the basic concepts of two former models, due to Saxena (1980-2) and to Lang and Logan (1977-9), respectively. The charm of the new model is in its ability to predict the large values of the activation energies for capture and emission, using purely spectroscopic input data, and without introducing an unnaturally large lattice relaxation.
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Henning et al. (1987) studied this question.
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