Compositional Disordering of In0.53Ga0.47As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing

In 0.53 Ga 0.47 As/InP multiple-quantum well (MQW) structures were disordered using a dopant-free technique for the first time. MQW disordering was accomplished by deposition of a Si 3 N 4 cap followed by repetitive rapid thermal annealing (RRTA) at 800°C. The optical transmission spectrum for the capped region is blue-shifted by 84 nm relative to a capless region in the 1.5 µm wavelength region. Such a large blue-shift could not be achieved by conventional rapid thermal annealing. The disordered region extends at least 1.7 µm into the MQW structures.