Direct modulation of a double-heterostructure laser using a Schottky-barrier-gate Gunn-effect digital device

By using a Schottky-barrier-gate Gunn-effect digital device the direct modulation of a GaAs-AlxGa1-xAs double-heterostructure laser was achieved with a rise time of 250 ps. The dependence of the optical waveforms on the bias-current levels was investigated in detail. The results are compared with a rate-equation analysis. A discrepancy between the present theory and the experiment indicates the existence of an additional relaxation mechanism.