A luminescence line has been observed at 1·454 ev at 20°K in germanium-doped GaAs. Measurements have been made of the peak energy, intensity and half-width as a function of temperature. It is proposed that the centre responsible for the luminescence is an arsenic vacancy bound to a germanium atom on an arsenic site. Preliminary results indicate that a similar centre is present in silicon-doped GaAs grown from a gallium solution.
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Williams et al. (1969) studied this question.
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