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Data are presented (77°K) showing that laser transitions to either the valence band edge or to the acceptor, or both, are possible in a specific impurity concentration range (2 × 1017−1018/cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a low-loss crystal structure that is pumped uniformly.
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Rossi et al. (1969) studied this question.
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