Answers are grounded in this paper and cite their sources.
Data are presented showing that lightly doped or relatively pure GaAs lases basically by a band-to-band recombination transition at a photon energy at threshold of 1.495 eV ≈ Eg − 0.015 eV (∼77°K). The ∼0.015-eV energy reduction from bandgap, which is greater than the exciton binding energy of 0.0034 eV (∼77°K) and unlike the exciton energy is dependent upon carrier concentration, occurs because of many-body, electron-hole-lattice (EHL) interactions.
No takes yet. Share an insight, caveat, or question.
Rossi et al. (1968) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: