An easily fabricated semiconductor laser, utilizing a mesa waveguide structure with a lenslike tapered active region for control of the optical laser mode, has been grown by metalorganic-chemical vapor deposition. This index-guided laser, which has thresholds of 40–60 mA and high differential quantum efficiency (∼40–50%), operates in the fundamental transverse mode up to its catastrophic damage limit. Single longitudinal mode is also obtained to greater than twice threshold.
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Scifres et al. (1981) studied this question.
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