Room-temperature c.w. operation of AlxGa1−xAs/AlyGa1−yAs d.h. structure visible (760~780 nm) lasers grown by metalorganic c.v.d. has been achieved. The planar structure lasers, with an oxide-insulated ~10 μm stripe and a cavity length of ~250 μm, showed c.w. threshold currents from 150 to 300 mA.
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Mori et al. (1980) studied this question.