Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N⁺ion irradiation of GaAs

Measurements of the lattice disorder and the depth distribution of disorder produced by 40 keV N+ ion irradiation of GaAs have been carried out before and after thermal annealing. The results show a significant dependence of lattice disorder on ion flux, ion fluence and implant temperature. A bimodal depth distribution of disorder was also observed under certain implantation conditions. The results suggest that point defect production processes in III-IV binary semiconductors (GaAs) are similar to those of Si, whilst the annealing behaviour of GaAs is rather complex and is strongly dependent on implant temperature.