350 keV Be ion implantation into semi-insulating GaAs was accomplished at R.T. for doses ranging from 1 × 10 13 to 1 × 10 16 cm -2 . To characterize the produced damage, defect conductivity profiling and electron diffraction were carried out for samples annealed below 450°C. Implanted layers were found to be extremely less damaged, even at high doses. To determine the optimum conditions for low resistive p -type layer formation, isochronal annealing characteristics were studied above 700°C. Mobility obtained was equivalent to bulk mobility. At higher doses, annealing, which caused a decrease in activity in GaAs. As a result, low resistive p -type layers were found to be reproducibly formed by relatively low temperature annealing (∼700°C) for high dose implanted samples, giving the lowest sheet resistance of 14 Ω/□ by single energy implantation.
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Nojima et al. (1978) studied this question.
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