GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2 or Si3N4 protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4 protective layer.
No takes yet. Share an insight, caveat, or question.
Harris et al. (1972) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: