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January 1, 1970Radiation Effects

Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide

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JSJ. D. SansburyStanford UniversityJGJ. F. GibbonsUniversity College Dublin

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Sansbury et al. (1970) studied this question.

synapsesocial.com/papers/6a6f75b9a528af2d65c2ffcahttps://doi.org/10.1080/00337577008236306
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Zn and Te Implantations into GaAs1967 · 38 citations
  2. 2RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON1969 · 39 citations
  3. 3Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface1958 · 488 citations
  4. 4CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE1969 · 20 citations