Electrical properties of oxygen-related donors formed in Cz-Si at 600°C are investigated. The formation of these donors was found to be very sensitive to the oxygen concentration. Electrical measurements on heat-treated and irradiated samples made it possible to outline the distribution of single and double donors over their ionization energies. A similarity in electrical properties of oxygen-related donors formed in Cz-Si at 450° and 600°C is discussed.
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Daluda et al. (1989) studied this question.
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