Auger electron spectroscopy and differential Hall measurements have been employed to investigate CVD Si3N4 layers as encapsulants for annealing of Se-implanted GaAs. Carrier concentrations exceeding 4×1018 cm−3 can be achieved by implanting 100-keV Se ions into Cr-doped semi-insulating GaAs heated at 400 °C and by subsequent annealing at 900 °C using an oxygen-free CVD Si3N4 encapsulant, in which out-diffusions of Ga and As are sufficiently depressed.
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Inada et al. (1978) studied this question.
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